Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements

Identification and carrier dynamics of the dominant lifetime limiting defect in n 4H-SiC epitaxial layers

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

Heavily Al-doped 4H–SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500 °C and 2000 °C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions ~ion images!. Transmission electron microscopy ~TEM! has been employ...

Structure of “star” defect in 4H-SiC substrates and epilayers

The structure of the “star” defect in 4H-SiC substrates and its effects on the extended defect structures in the epilayers were studied by molten KOH etching and transmission x-ray topography. Star defects consist of a center region with high densities of threading dislocations (both edge and screw types) and six arms of dislocation arrays extending along <11-20> directions. In addition, multip...

Divacancy in 3C- and 4H-SiC: An extremely stable defect

Rights: © 2002 American Physical Society (APS). This is the accepted version of the following article: Torpo, L. & Staab, T. E. M. & Nieminen, Risto M. 2002. Divacancy in 3Cand 4H-SiC : An extremely stable defect. Physical Review B. Volume 65, Issue 8. 085202/1-10. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.65.085202, which has been published in final form at http://journals.aps.org/prb...

The carbon vacancy related EI4 defect in 4H-SiC

Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at ~750°C. Additional large-splitting Si hyperfine (hf) lines and also other C and Si hf structures were observed. Based on the observed hf structures and ann...